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(R) BC177 BC177B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 and BC177B are silicon Planar Epitaxial PNP transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The NPN complementary types are BC107 and BC107B respectively. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T amb 25 C Storage Temperature Max. Operating Junction Temperature o Value -50 -45 -5 -100 -200 0.3 -65 to 175 175 Unit V V V mA mA W o o C C 1/6 December 2002 BC177 - BC177B THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 200 500 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)CES Parameter Collector Cut-off Current (V BE = 0) Collector-Emitter Breakdown Voltage (V BE = 0) Test Conditions V CE =-20 V V CE =-20 V I C = -10 A T C = 150 o C -50 Min. Typ. -1 Max. -100 -10 Unit nA A V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal Current Gain Transition Frequency Collector-Base Capacitance Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance I C = -2 mA -45 V I E = -10 A -5 V V CE(sat) V BE(sat) V BE(on) hfe I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -2 mA for BC177 for BC177B I B = -0.5 mA I B = -5 mA I B = -0.5 mA I B = -5 mA V CE = -5 V V CE = -5 V f = 1KHz 125 240 -550 -75 -200 -720 -860 -640 -250 mV mV mV mV -750 mV 500 500 200 5 2 5 4 30 10 MHz pF dB K 10 -4 S fT C CBO NF hie h re h oe I C = -10 mA V CE = -5 V f = 100 MHz IE = 0 VCB = -10 V f = 100 KHz I C = -0.2 mA V CE = -5 V B = 200Hz f = 1KHz R g = 2K I C = -2 mA I C = -2 mA I C = -2 mA V CE = -5 V V CE = -5 V V CE = -5 V f = 1KHz f = 1KHz f = 1KHz Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/6 BC177 - BC177B DC Transconductance. DC Normalized Current Gain. Collector-emitter Saturation Voltage. Normalized h Parameters. Normalized h Parameters. Collector-base Capacitance. 3/6 BC177 - BC177B Transition Frequency. Power Rating Chart. 4/6 BC177 - BC177B TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 5/6 BC177 - BC177B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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